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SSD2011A - Dual P-CHANNEL POWER MOSFET

Features

  • ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1, G2 SSD2011A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1 D2 Product Summary Part Number SSD2011A BVDSS - 60V RDS(on) 0.280Ω ID - 2.0A S1, S2 P-Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Cu.

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Full PDF Text Transcription

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Dual P-CHANNEL POWER MOSFET FEATURES ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1, G2 SSD2011A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1 D2 Product Summary Part Number SSD2011A BVDSS - 60V RDS(on) 0.280Ω ID - 2.0A S1, S2 P-Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed (2) Gate-to-Source Voltage Total Power Dissipation ( TA=25℃ ) ( TA=70℃ ) Operating and Junction Storage Temperature Range Value - 60 - 2.0 - 1.6 - 10.0 ±20 2.0 1.
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