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CXK5B81020TM - 131072-word 8-bit High Speed Bi-CMOS Static RAM

Description

CXK5B81020J/TM is a high speed 1M bit Bi-CMOS static RAM organized as 131072 words by 8 bits.

Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.

Features

  • Single 3.3V power supply: 3.3V ± 0.3V.
  • Fast access time 12ns (Max. ).
  • Low standby current: 10mA (Max. ).
  • Low power operation 864mW (Max. ).
  • Package line-up Dual Vcc/Vss CXK5B81020J 400mil 32pin SOJ package CXK5B81020TM 400mil 32pin TSOP package CXK5B81020J 32 pin SOJ (PIastic) CXK5B81020TM 32 pin TSOP (PIastic) Function 131072 word × 8-bit static RAM Structure Silicon gate Bi-CMOS IC Block Diagram A15 A16 A9 A8 A13 A14 A11 A10 Buffer Row Decoder Memor.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CXK5B81020J/TM -12 131072-word × 8-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B81020J/TM is a high speed 1M bit Bi-CMOS static RAM organized as 131072 words by 8 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications. Features • Single 3.3V power supply: 3.3V ± 0.3V • Fast access time 12ns (Max.) • Low standby current: 10mA (Max.) • Low power operation 864mW (Max.
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