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CXK5B41020TM - High Speed Bi-CMOS Static RAM

Download the CXK5B41020TM datasheet PDF. This datasheet also covers the CXK5B41020TM- variant, as both devices belong to the same high speed bi-cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

static RAM organized as 262144 words by 4 bits.

applications.

Features

  • Single 3.3V power supply: 3.3V±0.3V.
  • Fast access time 12ns (Max. ).
  • Low standby current: 10mA (Max. ).
  • Low power operation 792mW (Max. ).
  • Package line-up Dual Vcc/Vss CXK5B41020TM 400mil 32pin TSOP package Function 262144 word × 4-bit static RAM Structure Silicon gate Bi-CMOS IC Block Diagram Pin Configuration (Top View) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CXK5B41020TM-_SonyCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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CXK5B41020TM -12 262144-word × 4-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B41020TM is a high speed 1M bit Bi-CMOS 32 pin TSOP (PIastic) static RAM organized as 262144 words by 4 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications. Features • Single 3.3V power supply: 3.3V±0.3V • Fast access time 12ns (Max.) • Low standby current: 10mA (Max.) • Low power operation 792mW (Max.
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