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CXK5B16120TM - High Speed Bi-CMOS Static RAM

Download the CXK5B16120TM datasheet PDF. This datasheet also covers the CXK5B16120J variant, as both devices belong to the same high speed bi-cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

CMOS static RAM organized as 65536 words by 16 bits.

Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.

Features

  • Single 3.3V Supply 3.3V±0.3V.
  • Fast access time 12ns (Max. ).
  • Low stand-by current: 10mA (Max. ).
  • Low power operation 972mW (Max. ).
  • Package line-up Dual Vcc/Vss CXK5B16120J 400mil 44pin SOJ Package CXK5B16120TM 400mil 44pin TSOP Package Function 65536-word × 16-bit static RAM Structure Silicon gate Bi-CMOS IC Block Diagram A14 A15 A9 A8 A12 A13 A11 A10 A5 A4 A3 A0 A2 A1 A6 A7 UB LB WE OE Buffer Buffer Row Decoder Pin configuration Pin Desc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CXK5B16120J_SonyCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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CXK5B16120J/TM -12 65536-word × 16-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B16120J/TM is a high speed 1M bit Bi- CMOS static RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications. CXK5B16120J 44 pin SOJ (Plastic) CXK5B16120TM 44 pin TSOP (Plastic) Features • Single 3.3V Supply 3.3V±0.3V • Fast access time 12ns (Max.) • Low stand-by current: 10mA (Max.) • Low power operation 972mW (Max.
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