SSF3639C Datasheet - Silikron Semiconductor

SSF3639C, MOSFET

SSF3639C DESCRIPTION The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge.
The complementary MOSFET m

Features

* N-Channel VDS = 30V,ID = 6.3A RDS(ON) < 35.5mΩ @ VGS=4.5V RDS(ON) < 22mΩ @ VGS=10V
* P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package N-channel P-ch

SSF3639C-SilikronSemiconductor.pdf