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SSF3611E MOSFET

SSF3611E Description

                                 Main Product Characteristics: VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

SSF3611E Features

* SOP-8 
* Advanced trench MOSFET process technology

SSF3611E Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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MOSFET Silikron Semiconductor
Silikron Semiconductor SSF3611E-like datasheet