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SVSP11N65K - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Download the SVSP11N65K datasheet PDF (SVSP11N65D included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 650v super junction mos power transistor.

Description

SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 11A,650V, RDS(on)(typ. )=0.33@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220F-3L 1 3 TO-252-2L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVSP11N65D-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVSP11N65K
Manufacturer Silan Microelectronics
File Size 408.93 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP11N65K Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SVSP11N65D/F/S/FJD/K/TD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 1 3 TO-263-2L 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220-3L 123 TO-220FJD-3L 12 3 TO-262-3L FEATURES  11A,650V, RDS(on)(typ.)=0.
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