SVS60R360FJDE3, SVS60R360FJHE3 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

Datasheet Details

Part number	SVS60R360FJDE3, SVS60R360FJHE3
Manufacturer	Silan Microelectronics
File Size	443.84 KB
Description	600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVS60R360FJHE3-SilanMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: SVS60R360FJDE3, SVS60R360FJHE3. Please refer to the document for exact specifications by model.

SVS60R360FJH(FJD)(D)(L8A)E3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

11A, 600V, RDS(on)(typ. )=0.3@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 1 2 3 1 TO-220FJD-3L 2 3 TO-220FJH-3L 1 3 DFN-4-8x8x0.85-2.0 TO-252-2L KEY.

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Published: Apr 2, 2025 |