SVS60R190FJDD4 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

SVS60R190FJDD4 Datasheet Preview — Preview of SVS60R190FJDD4 PDF

Datasheet Details

Part number	SVS60R190FJDD4
Manufacturer	Silan Microelectronics
File Size	721.07 KB
Description	600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVS60R190FJDD4-SilanMicroelectronics.pdf

SVS60R190FJDD4 Product details

Description

2 SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.It achieves low conduction loss and switching losses.It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.

Features

123 1 TO-220FJD-3L 3 1.Gate 2.Drain 3.Source 1 2 3 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) TO-220F-3L DFN-4-8x8x0.85-2.0 123 TO-220-3L 1 3 TO-263-2L 12 3 TO-262-3L.
20A, 600V, RDS(on)(typ. )=0.165@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 12 3 TO-3P 12 3 TO-247-3L KEY P.

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Published: Mar 17, 2025 |