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SVFP4N65CAD - 650V N-CHANNEL MOSFET

Description

SVFP4N65CAD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 4A, 650V, RDS(on)(typ. )=2.3@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L.

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Datasheet Details

Part number SVFP4N65CAD
Manufacturer Silan Microelectronics
File Size 326.31 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVFP4N65CAD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SVFP4N65CAD_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP4N65CAD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  4A, 650V, RDS(on)(typ.)=2.3@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.
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