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BUZ 50 B
SIPMOS ® Power Transistor
• N channel • Enhancement mode
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 50 B
VDS
1000 V
ID
2A
RDS(on)
8Ω
Package TO-220 AB
Ordering Code C67078-A1307-A4
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V
VDS VDGR ID
RGS = 20 kΩ
Continuous drain current
A 2
TC = 25 °C
Pulsed drain current
IDpuls
8
TC = 25 °C
m
.co
Gate source voltage Power dissipation
VGS Ptot
± 20 78
V W
TC = 25 °C
4U
Operating temperature
eet
Tj Tstg RthJC RthJA
-55 ... ...+ 150 °C -55 ... ...+ 150 ≤ 1.6 75 C 55 / 150 / 56 K/W
Storage temperature Thermal resistance, chip to ambient
ww
w.
BUZ50B Datasheet
