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BUZ50C - Power Transistor

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Datasheet Details

Part number BUZ50C
Manufacturer Siemens Semiconductor Group
File Size 168.80 KB
Description Power Transistor
Datasheet download datasheet BUZ50C Datasheet
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www.DataSheet4U.com BUZ 50 C SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 G Pin 2 D Pin 3 S Type BUZ 50 C VDS 1000 V ID 2.3 A RDS(on) 6Ω Package TO-220 AB Ordering Code C67078-A1307-A5 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 1000 1000 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 2.3 TC = 25 °C Pulsed drain current IDpuls 9 TC = 25 °C m .co Gate source voltage Power dissipation VGS Ptot ± 20 78 V W TC = 25 °C 4U Operating temperature eet Tj Tstg RthJC RthJA -55 ... ...+ 150 °C -55 ... ...+ 150 ≤ 1.6 75 C 55 / 150 / 56 K/W Storage temperature Thermal resistance, chip to ambient ww w.
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