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BUZ51 - Power Transistor

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Datasheet Details

Part number BUZ51
Manufacturer Siemens Semiconductor Group
File Size 162.79 KB
Description Power Transistor
Datasheet download datasheet BUZ51 Datasheet
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www.DataSheet4U.com BUZ 51 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 51 VDS 1000 V ID 3.4 A RDS(on) 4Ω Package TO-220 AB Ordering Code C67078-S1344-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3.4 Unit A ID IDpuls 13.5 TC = 29 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax IAR EAR EAS 3.4 12 mJ L = 67 mH, Tj = 25 °C .co ID = 3.4 A, VDD = 50 V, RGS = 25 Ω 410 m Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse 4U Gate source voltage Power dissipation VGS Ptot ± 20 125 V W TC = 25 °C eet Operating temperature Sh Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤1 75 E 55 / 150 / 56 °C K/W Storage temperature ww w.
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