BFY196 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.)

Siemens Semiconductor Group

Datasheet Details

Part number	BFY196
Manufacturer	Siemens Semiconductor Group
File Size	120.95 KB
Description	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.)
Datasheet	BFY196_SiemensSemiconductorGroup.pdf

HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz ESA Qualification pending Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 196 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E BFY 196 Package Micro-X1 (ql) Quality Le.

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Published: Mar 23, 2005 |