BFY193 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)

Siemens Semiconductor Group

Datasheet Details

Part number	BFY193
Manufacturer	Siemens Semiconductor Group
File Size	122.95 KB
Description	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)
Datasheet	BFY193_SiemensSemiconductorGroup.pdf

HiRel Discrete and Microwave Semiconductor.
For low noise, high gain broadband amplifiers up to 2 GHz.
For linear broadband amplifiers.
Hermetically sealed microwave package.
fT = 8 GHz, F = 2.3 dB at 2 GHz.
qualified.
ESA/SCC Detail Spec. No. : 5611/006 BFY 193 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 193 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B.

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Published: Mar 23, 2005 |