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BFY180 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)

Features

  • HiRel Discrete and Microwave Semiconductor.
  • For low power amplifiers at collector currents from 0.2 to 2.5 mA.
  • Hermetically sealed microwave package.
  • fT = 6.5 GHz, F = 2.6 dB at 2 GHz.
  • qualified.
  • ESA/SCC Detail Spec. No. : 5611/006 BFY 180 Micro-X1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY 180 (ql) Marking Ordering Code see below H: High Rel Quality, S: Space Quality, Pin Configuration C E B E Package Micro-X1 (ql) Qua.

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📁 Similar Datasheet

Part Number Description Manufacturer
BFY180 HiRel NPN Silicon RF Transistor Infineon Technologies AG
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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
BFY181 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
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BFY183 HiRel NPN Silicon RF Transistor
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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.
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