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SEMiX603GB12E4Ip IGBT

SEMiX603GB12E4Ip Description

SEMiX603GB12E4Ip SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB12E4Ip .

SEMiX603GB12E4Ip Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient
* High short circuit capability
* Press-fit pins as auxiliary contacts
* Thermally optimized ceramic
* Current sensing shunt resistor
* U

SEMiX603GB12E4Ip Applications

* br>
* AC inverter drives
* UPS
* Renewable energy systems Remarks
* Product reliability results are valid for Tj=150°C
* Visol between temperature sensor and power section is only 2500V
* For storage and case temperature with TIM see document “TP(

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