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SEMiX603GB12E4SiCp IGBT

SEMiX603GB12E4SiCp Description

SEMiX603GB12E4SiCp SEMiX® 3p Trench IGBT Modules SEMiX603GB12E4SiCp .

SEMiX603GB12E4SiCp Features

* With Silicon Carbide (SiC) Schottky diodes
* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient
* Press-fit pins as auxiliary contacts
* Thermally optimized ceramic
* UL recognized, file no. E6353

SEMiX603GB12E4SiCp Applications

* br>
* AC inverter drives
* UPS
* Renewable energy systems Remarks
* Product reliability results are valid for Tj=150°C
* Visol between temperature sensor and power section is only 2500V
* RG off must be at least 16Ω in case VCC ≥ 900V
* For st

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