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HFW640 200V N-Channel MOSFET

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Description

HFW640 / HFI640 Mar 2008 HFW640 / HFI640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145Ω ID = 18 A .

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Datasheet Specifications

Part number
HFW640
Manufacturer
SemiHow
File Size
709.39 KB
Datasheet
HFW640-SemiHow.pdf
Description
200V N-Channel MOSFET

Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 37 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.145 Ω (Typ. ) @VGS=10V  100% Avalanche Tes

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