Datasheet Specifications
- Part number
- HFW10N65S
- Manufacturer
- SemiHow
- File Size
- 214.01 KB
- Datasheet
- HFW10N65S-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFW10N65S July 2016 HFW10N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 9.2 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche TestHFW10N65S Distributors
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