Datasheet Specifications
- Part number
- HFW10N60S
- Manufacturer
- SemiHow
- File Size
- 183.45 KB
- Datasheet
- HFW10N60S-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFW10N60S May 2010 HFW10N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche TestHFW10N60S Distributors
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