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HFP6N90 N-Channel MOSFET

HFP6N90 Description

HFP6N90 Dec 2005 HFP6N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.95 Ω ID = 6.0 A .

HFP6N90 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ. ) @VGS=10V  100% Avalanche Test

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Datasheet Details

Part number
HFP6N90
Manufacturer
SemiHow
File Size
1.15 MB
Datasheet
HFP6N90-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
SemiHow HFP6N90-like datasheet