Datasheet Specifications
- Part number
- HFP4N65
- Manufacturer
- SemiHow
- File Size
- 770.05 KB
- Datasheet
- HFP4N65-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFP4N65 April 2006 HFP4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 2.3 Ω (Typ. ) @VGS=10V 100% Avalanche TesteHFP4N65 Distributors
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