Datasheet Specifications
- Part number
- HFP12N65S
- Manufacturer
- SemiHow
- File Size
- 247.81 KB
- Datasheet
- HFP12N65S-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFP12N65S Aug 2009 HFP12N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.67 ȍ ID = 12 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ (Typ. ) @VGS=10V 100% Avalanche TestHFP12N65S Distributors
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