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HFB1N70 N-Channel MOSFET

HFB1N70 Description

HFB1N70 Jan 2007 HFB1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 10.3 Ω ID = 0.3 A .

HFB1N70 Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 4.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 10.3 Ω (Typ. ) @VGS=10V ‰ 100% Avalanche Tes

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Datasheet Details

Part number
HFB1N70
Manufacturer
SemiHow
File Size
296.50 KB
Datasheet
HFB1N70-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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