Datasheet Specifications
- Part number
- HFB1N70
- Manufacturer
- SemiHow
- File Size
- 296.50 KB
- Datasheet
- HFB1N70-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFB1N70 Jan 2007 HFB1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 10.3 Ω ID = 0.3 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 10.3 Ω (Typ. ) @VGS=10V 100% Avalanche TesHFB1N70 Distributors
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