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HFB1N65S N-Channel MOSFET

HFB1N65S Description

HFB1N65S Dec 2012 HFB1N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 0.3 A .

HFB1N65S Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tes

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Datasheet Details

Part number
HFB1N65S
Manufacturer
SemiHow
File Size
241.86 KB
Datasheet
HFB1N65S-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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