Datasheet Specifications
- Part number
- HFB1N65S
- Manufacturer
- SemiHow
- File Size
- 241.86 KB
- Datasheet
- HFB1N65S-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFB1N65S Dec 2012 HFB1N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 0.3 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche TesHFB1N65S Distributors
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