Datasheet Specifications
- Part number
- HFB1N60S
- Manufacturer
- SemiHow
- File Size
- 241.74 KB
- Datasheet
- HFB1N60S-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFB1N60S Sep 2009 HFB1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.3 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche TesteHFB1N60S Distributors
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