D2017UK Datasheet - Seme LAB

D2017UK METAL GATE RF SILICON FET

D2017UK Features

* D ( 2 p ls ) E

* SIMPLIFIED AMPLIFIER DESIGN

* SUITABLE FOR BROAD BAND APPLICATIONS F G H

* LOW Crss

* SIMPLE BIAS CIRCUITS DRAIN DP PIN 1 PIN 3 SOURCE GATE PIN 2

* LOW NOISE

* HIGH GAIN

* 13 dB MINIMUM mm 16.51 6.35 45° 1.52 6.35 0.1

Datasheet Details

D2017UK

Seme LAB

39.58 KB

Metal gate rf silicon fet.

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D2017UK METAL GATE SILICON FET Seme LAB

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