S8254 - BATTERY PROTECTION IC

Seiko Instruments

Datasheet Details

(1) High-accuracy voltage detection for each cell.
Overcharge detection voltage n (n = 1 to 4) 3.9 V to 4.4 V (50 mV steps) Accuracy ±25 mV.
1 Accuracy ±50 mV Overcharge release voltage n (n = 1 to 4) 3.8 V to 4.4 V.
1. Overcharge hysteresis voltage n (n = 1 to 4) can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV steps. (Overcharge hysteresis voltage = Overcharge detection voltage.
Overcharge release voltage).
www. DataSheet4U.

📁 S8254 Similar Datasheet

S8200 - Linear LED Driver IC (KODENSHI)
S8201 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
S8202 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
S8205A - Dual N-Channel MOSFET (Tuofeng Semiconductor)
S82078 - 82078 CHMOS SINGLE-CHIP FLOPPY DISK CONTROLLER (Intel Corporation)
S822T - Silicon NPN Planar RF Transistor (Vishay Telefunken)
S822TRW - Silicon NPN Planar RF Transistor (Vishay Telefunken)
S822TW - Silicon NPN Planar RF Transistor (Vishay Telefunken)

Other Datasheets by Seiko Instruments

Published: Jul 21, 2007 |