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S8201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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Description

polyfet rf devices S8201 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Specifications

Part number
S8201
Manufacturer
Polyfet RF Devices
File Size
37.23 KB
Datasheet
S8201_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 4.0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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