STT6602 Datasheet - SeCoS

STT6602, MOSFET

STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS Compli.
The STT6602 uses advanced trench technology to provide excellent on-resistance and low gate charge.

STT6602-SeCoS.pdf

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Datasheet Details

Part number:

STT6602

Manufacturer:

SeCoS

File Size:

2.92 MB

Description:

MOSFET

Features

* Low Gate Change Low On-resistance 1 2 3 F DG K C H J MARKING REF. 6602 Date Code A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-

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