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STT6603 P-Channel MOSFET

STT6603 Description

STT6603 S a mHop Microelectronics C orp.Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -60V .

STT6603 Features

* Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-223 package. ID -2.5A R DS(ON) (m Ω) Max 180 @ VGS=-10V 240 @ VGS=-4.5V D G S G SO T - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage

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P-Channel MOSFET SamHop Microelectronics
SamHop Microelectronics STT6603-like datasheet