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STT6601 Datasheet - SeCoS

STT6601, MOSFET

STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS .
The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology.

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Datasheet Details

Part number:

STT6601

Manufacturer:

SeCoS

File Size:

485.76 KB

Description:

MOSFET

STT6601 Distributors

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STT6601 MOSFET SeCoS

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