Datasheet4U Logo Datasheet4U.com

D1936 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Large current capacity.
  • Low collector to emitter saturation voltage.
  • Wide ASO. Package Dimensions unit:mm 2033 [2SB1296/2SD1936] ( ) : 2SB1296 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
D1933 2SD1933 Rohm
D1910 2SD1910 Wing Shing Electronic
D1911 2SD1911 Wing Shing Computer Components
D1912 2SD1912 Inchange Semiconductor
D1913 2SD1913 Sanyo Semicon Device

Other Datasheets by SANYO (now Panasonic)

Part Number Description
D1935 PNP/NPN Epitaxial Planar Silicon Transistors
D1902 2SD1902
D1903 PNP/NPN Epitaxial Planar Silicon Transistors
D1904 PNP/NPN Epitaxial Planar Silicon Transistors
D1906 PNP/NPN Epitaxial Planar Type Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications · AF power amplifier, medium-speed switching, smallsized motor drivers. Features · Large current capacity. · Low collector to emitter saturation voltage. · Wide ASO.