D1910
DESCRIPTION
Silicon Diffused Power Transistor
Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers
QUICK REFERENCE DATA
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TO-3PFM
CONDITIONS VBE = 0V TYP
SYMBOL
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
Tmb 25 IC = 3.0A; IB = 0.8A f = 16KHz IF = 3.0A ICsat = 3.0A; f = 16KHz
MAX 1500 600 3 6 40 5 2.0 1.0
UNIT V V A A W V A V s
LIMITING VALUES
SYMBOL
VCESM VCEO IC ICM IB IBM Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power...
