• Part: D1906
  • Description: PNP/NPN Epitaxial Planar Type Silicon Transistors
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 154.18 KB
Download D1906 Datasheet PDF
SANYO
D1906
Features - Suitable for sets whose height is restricted. - Low collector to emitter saturation voltage. - Large current capacity. Package Dimensions unit:mm 2049B [2SB1270/2SD1906] ( ) : 2SB1270 Specifications E : Emitter C : Collector B : Base SANYO :TO-220MF Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions Ratings (- )90 (- )80 (- )6 (- )5 (- )9 1.65 30 150 - 55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO h FE1 h FE2 f T VCE(sat) VCB=(- )80V, IE=0 VEB=(- )4V, IC=0 VCE=(- )2V, IC=(- )1A VCE=(- )2V, IC=(- )3A VCE=(- )5V, IC=(- )1A IC=(- )3A, IB=(-...