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Ordering number : ENA1710A
ECH8657
SANYO Semiconductors
DATA SHEET
ECH8657
Features
• •
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
4V drive Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.8mm) Conditions Ratings 35 ±20 4.5 30 1.3 1.