2SK2170 - N-Channel Junction Silicon FET

Sanyo Semicon Device

Datasheet Details

Part number	2SK2170
Manufacturer	Sanyo Semicon Device
File Size	41.18 KB
Description	N-Channel Junction Silicon FET
Datasheet	2SK2170_SanyoSemiconDevice.pdf

Ultrasmall-sized package permitting 2SK2170 applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Zero-.

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Published: Mar 30, 2005 |