2SK217 Datasheet (Hitachi Semiconductor) - Silicon N-Channel Junction FET

2SK217, Silicon N-Channel Junction FET

2SK217 Silicon N-Channel Junction FET Application VHF amplifier Outline MPAK 3 1 2 1.

Gate 2.

Drain 3.

Source 2SK217 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain current Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO ID IG Pch Tch Tstg Ratings 30 20 10 150 150 55 to +150 Unit V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate cutoff current Gate to source cu