2SD1835 - PNP/NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SD1835
Manufacturer	Sanyo Semicon Device
File Size	178.98 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistor
Datasheet	2SD1835_SanyoSemiconDevice.pdf

Adoption of FBET, MBIT processes.
Large current capacity.
Low collector-to-emitter saturation voltage.
Fast switching time. ( ) : 2SB1229 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions JEDEC : TO-92 EIAJ : SC-43 SANYO :.

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Published: Apr 3, 2005 |