2SD1801 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of FBET, MBIT processes.
Large current capacitance and wide ASO.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Speciﬁcations ( ): 2SB1201 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP.

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Published: Apr 2, 2015 |