2SC5298 - NPN TRANSISTOR

Sanyo Semicon Device

Datasheet Details

High Speed : tf=100ns typ.
High Breakdown voltage : VCBO=1500V.
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode. Package Dimensions unit: mm 2039C-TO3PML [2SC5298] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temper.

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Published: Apr 3, 2005 |