2SC5297 - NPN TRANSISTOR

Sanyo Semicon Device

Datasheet Details

High speed : tf=100ns typ.
High breakdown voltage : VCBO=1500V.
High reliability (Adoption of HVP process).
Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5297] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Juncti.

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Published: Apr 3, 2005 |