2SC4204 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC4204
Manufacturer	Sanyo Semicon Device
File Size	136.10 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC4204_SanyoSemiconDevice.pdf

Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Large current capacity (IC=0.7A).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Te.

📁 2SC4204 Similar Datasheet

2SC4200 - NPN EPITAXIAL TYPE TRANSISTOR (Toshiba Semiconductor)
2SC4203 - Silicon Epitaxial Planar Type Transistor (Toshiba Semiconductor)
2SC4205 - NPN Transistor (INCHANGE)
2SC4206 - TRIPLE DIFFUSED PLANER TYPE TRANSISTOR (New Jersey Semi-Conductor)
2SC4207 - Silicon NPN Transistor (Toshiba Semiconductor)
2SC4208 - NPN Transistor (Panasonic Semiconductor)
2SC4208A - NPN Transistor (Panasonic Semiconductor)
2SC4209 - Silicon NPN Epitaxial Type TRANSISTOR (Toshiba Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |