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2SC3820 - NPN Transistor

Sanyo Semicon Device

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Datasheet Details

Part number	2SC3820
Manufacturer	Sanyo Semicon Device
File Size	85.63 KB
Description	NPN Transistor
Datasheet	2SC3820_SanyoSemiconDevice.pdf

2SC3820 Product details

Features

Adoption of FBET and MBIT processes.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V).
Small Cob (Cob=2.0pF typ). Package Dimensions unit:mm 2033 [2SC3820] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage.

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Published: Mar 22, 2005 |