2SC3807MP - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3807MP
Manufacturer	Sanyo Semicon Device
File Size	71.31 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC3807MP_SanyoSemiconDevice.pdf

Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO(VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEB.

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Published: Oct 1, 2007 |