2SC3808 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3808
Manufacturer	Sanyo Semicon Device
File Size	86.27 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC3808_SanyoSemiconDevice.pdf

Large current capacity (IC=2A).
Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V). Package Dimensions unit:mm 2043A [2SC3808] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC.

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Published: Mar 22, 2005 |