2SC3552 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3552
Manufacturer	Sanyo Semicon Device
File Size	151.05 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3552_SanyoSemiconDevice.pdf

High breakdown voltage and high reliability.
Fast switching speed (tf : 0.1µs typ).
Wide ASO.
Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3552] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚.

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Published: Mar 22, 2005 |