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2SC3503 - PNP/NPN Transistors

Sanyo Semicon Device

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Datasheet Details

Part number	2SC3503
Manufacturer	Sanyo Semicon Device
File Size	156.42 KB
Description	PNP/NPN Transistors
Datasheet	2SC3503_SanyoSemiconDevice.pdf

2SC3503 Product details

Features

Package Dimensions unit:mm 2009A [2SA1381/2SC3503].
High breakdown voltage : VCEO≥300V.
Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.
Adoption of MBIT process. JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature S.

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Published: Mar 22, 2005 |