2SC3183 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3183
Manufacturer	Sanyo Semicon Device
File Size	103.86 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3183_SanyoSemiconDevice.pdf

High breakdown voltage (VCBO≥900V).
Fast switching speed.
Wide ASO. Package Dimensions unit:mm 2010C [2SC3183] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Condition.

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Published: Mar 22, 2005 |